Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF7705
IRF7705 spec: HEXFET power MOSFET. VDSS = -30V, RDS(on) = 18mOhm, ID = -8.0A @ VGS = -10V. RDS(on) = 30mOhm, ID = -6.0A @ VGS = -4.5V.
Ähnliche IRF7705
- IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF720
- N-channel HEXFET, 400V, 3.3A
- IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
- IRF721
- N-channel HEXFET, 350V, 3.3A
- IRF722
- N-channel HEXFET, 400V, 2.8A
IRF7705 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : TSSOP
Pins : 8
Temperatur : Min -55 °C | Max 150 °C
Größe : 160 KB
Application : HEXFET power MOSFET. VDSS = -30V, RDS(on) = 18mOhm, ID = -8.0A @ VGS = -10V. RDS(on) = 30mOhm, ID = -6.0A @ VGS = -4.5V.
IRF7705 PDF-Download