Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF7706
IRF7706 spec: HEXFET power MOSFET. VDSS = -30V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -10V. RDS(on) = 36mOhm, ID = -5.6A @ VGS = -4.5V.
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF7706
IRF7706 spec: HEXFET power MOSFET. VDSS = -30V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -10V. RDS(on) = 36mOhm, ID = -5.6A @ VGS = -4.5V.
Hersteller : IR
Verpacken : TSSOP
Pins : 8
Temperatur : Min -55 °C | Max 150 °C
Größe : 167 KB
Application : HEXFET power MOSFET. VDSS = -30V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -10V. RDS(on) = 36mOhm, ID = -5.6A @ VGS = -4.5V.