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IRFB260N spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
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IRFB260N Datenblatt und Spezifikationen
Hersteller : IR
Verpacken :
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Größe : 98 KB
Application : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
IRFB260N PDF-Download