Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRFD9210
IRFD9210 spec: HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -0.40 A
Ähnliche IRFD9210
- IRFD014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 1.7A
- IRFD024
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.10 Ohm, ID = 2.5A
- IRFD110
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.0 A
- IRFD120
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.27 Ohm, ID = 1.3 A
- IRFD210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.60 A
- IRFD214
- HEXFET power MOSFET
- IRFD220
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.80 Ohm, ID = 0.80 A
- IRFD224
- HEXFET power MOSFET
IRFD9210 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : HD-1
Pins : 4
Temperatur : Min -55 °C | Max 150 °C
Größe : 188 KB
Application : HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -0.40 A
IRFD9210 PDF-Download