IRFIB6N60A spec: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A

Ähnliche IRFIB6N60A

IRFI064
- HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
IRFI064
- HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
IRFI1010N
- HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A
IRFI1310G
- HEXFET power MOSFET
IRFI260
- HEXFET transistor
IRFI3205
- "HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A"
IRFI360
- HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A
IRFI460
- HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A

IRFIB6N60A Datenblatt und Spezifikationen

Hersteller : IR

Verpacken : TO-220 FULLPAK

Pins : 3

Temperatur : Min -55 °C | Max 150 °C

Größe : 163 KB

Application : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A