IRFIB7N50A spec: HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A

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IRFIB7N50A Datenblatt und Spezifikationen

Hersteller : IR

Verpacken : TO-220 FULLPAK

Pins : 3

Temperatur : Min -55 °C | Max 150 °C

Größe : 105 KB

Application : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A