Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRFS59N10D
IRFS59N10D spec: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
Ähnliche IRFS59N10D
- IRFS17N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFS33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
- IRFS38N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.054 Ohm, ID = 44A
- IRFS4710
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.014 Ohm, ID = 75A
- IRFS59N10D
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : DDPak
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Größe : 151 KB
Application : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D PDF-Download