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IRFU120N spec: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
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IRFU120N Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : I-PAK
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Größe : 156 KB
Application : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
IRFU120N PDF-Download