IRG4BC20FD-S spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A

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IRG4BC20FD-S Datenblatt und Spezifikationen

Hersteller : IR

Verpacken : DDPak

Pins : 3

Temperatur : Min -55 °C | Max 150 °C

Größe : 244 KB

Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A