Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4BC20S
IRG4BC20S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4BC20S
IRG4BC20S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
Hersteller : IR
Verpacken :
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 172 KB
Application : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A