IRG4BC30FD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A

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IRG4BC30FD Datenblatt und Spezifikationen

Hersteller : IR

Verpacken :

Pins : 3

Temperatur : Min -55 °C | Max 150 °C

Größe : 453 KB

Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A