IRG4BC30W-S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A

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IRG4BC30W-S Datenblatt und Spezifikationen

Hersteller : IR

Verpacken : DDPak

Pins : 3

Temperatur : Min -55 °C | Max 150 °C

Größe : 206 KB

Application : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A