Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4PC30FD
IRG4PC30FD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4PC30FD
IRG4PC30FD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
Hersteller : IR
Verpacken : TO-247AC
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 230 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A