Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4PC30S
IRG4PC30S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4PC30S
IRG4PC30S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
Hersteller : IR
Verpacken : TO-247AC
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 131 KB
Application : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A