Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4PC30UD
IRG4PC30UD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4PC30UD
IRG4PC30UD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
Hersteller : IR
Verpacken : TO-247AC
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 232 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A