Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4PSC71KD
IRG4PSC71KD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4PSC71KD
IRG4PSC71KD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A
Hersteller : IR
Verpacken : SUPER-247
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 215 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A