Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4RC10K
IRG4RC10K spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4RC10K
IRG4RC10K spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
Hersteller : IR
Verpacken : D-PAK
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 147 KB
Application : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A