Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4RC10UD
IRG4RC10UD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4RC10UD
IRG4RC10UD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.
Hersteller : IR
Verpacken : TO-252AA
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 210 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.