Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4RC20F
IRG4RC20F spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRG4RC20F
IRG4RC20F spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A
Hersteller : IR
Verpacken : TO-252AA
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 290 KB
Application : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A