Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > PVT412S-T
PVT412S-T spec: HEXFET power MOSFET photovoltaic relay
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PVT412S-T Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : DIP
Pins : 6
Temperatur : Min -40 °C | Max 85 °C
Größe : 328 KB
Application : HEXFET power MOSFET photovoltaic relay
PVT412S-T PDF-Download