Path:OKDatasheet > Halbleiter Datenblatt > ISSI Datenblatt > IS41LV16400-50TE
IS41LV16400-50TE spec: 3.3V 4M x 16(64-MBIT) dynamic RAM with edo page mode
Ähnliche IS41LV16400-50TE
- IS41C16100-50K
- 5V 1M x 16(16-MBIT) dynamic RAM with edo page mode
- IS41C16100-50KE
- 5V 1M x 16(16-MBIT) dynamic RAM with edo page mode
- IS41C16100-50KI
- 5V 1M x 16(16-MBIT) dynamic RAM with edo page mode
- IS41C16100-50T
- 5V 1M x 16(16-MBIT) dynamic RAM with edo page mode
- IS41C16100-50TE
- 5V 1M x 16(16-MBIT) dynamic RAM with edo page mode
- IS41C16100-50TI
- 5V 1M x 16(16-MBIT) dynamic RAM with edo page mode
- IS41C16100-60K
- 5V 1M x 16(16-MBIT) dynamic RAM with edo page mode
- IS41C16100-60KI
- 5V 1M x 16(16-MBIT) dynamic RAM with edo page mode
IS41LV16400-50TE Datenblatt und Spezifikationen
Hersteller : ISSI
Verpacken : TSOP
Pins : 50
Temperatur : Min -30 °C | Max 85 °C
Größe : 155 KB
Application : 3.3V 4M x 16(64-MBIT) dynamic RAM with edo page mode
IS41LV16400-50TE PDF-Download