Path:OKDatasheet > Halbleiter Datenblatt > IXYS Datenblatt > IXDN55N120
IXDN55N120 spec: 1200V high voltage IGBT with optional diode
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IXDN55N120 Datenblatt und Spezifikationen
Hersteller : IXYS
Verpacken : SOT-227B
Pins : 4
Temperatur : Min -40 °C | Max 150 °C
Größe : 79 KB
Application : 1200V high voltage IGBT with optional diode
IXDN55N120 PDF-Download