Path:OKDatasheet > Halbleiter Datenblatt > IXYS Datenblatt > IXFN100N10S3
IXFN100N10S3 spec: 100V HiPerFET power MOSFET with schottky diodes
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IXFN100N10S3 Datenblatt und Spezifikationen
Hersteller : IXYS
Verpacken : SOT-227B
Pins : 4
Temperatur : Min -40 °C | Max 150 °C
Größe : 108 KB
Application : 100V HiPerFET power MOSFET with schottky diodes
IXFN100N10S3 PDF-Download