Path:OKDatasheet > Halbleiter Datenblatt > IXYS Datenblatt > IXST15N120BD1
IXST15N120BD1 spec: 1200V high voltage IGBT with diode
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IXST15N120BD1 Datenblatt und Spezifikationen
Hersteller : IXYS
Verpacken : TO-268
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 61 KB
Application : 1200V high voltage IGBT with diode
IXST15N120BD1 PDF-Download