Path:OKDatasheet > Halbleiter Datenblatt > Infineon Datenblatt > HYB3165160T-50
HYB3165160T-50 spec: 4M x 16bit DRAM
Ähnliche HYB3165160T-50
- HYB3116160BSJ-70
- 1M x 16bit EDO-DRAM
- HYB3116160BST-50
- 1M x 16bit EDO-DRAM
- HYB3116160BST-60
- 1M x 16bit EDO-DRAM
- HYB3116160BST-70
- 1M x 16bit EDO-DRAM
- HYB3116400BJ-50
- 4M x 4bit DRAM
- HYB3116400BJ-60
- 4M x 4bit DRAM
- HYB3116400BJ-70
- 4M x 4bit EDO-DRAM
- HYB3116400BT-50
- 4M x 4bit DRAM
HYB3165160T-50 Datenblatt und Spezifikationen
Hersteller : Infineon
Verpacken : P-TSOPII-54-1
Pins : 54
Temperatur : Min 0 °C | Max 70 °C
Größe : 403 KB
Application : 4M x 16bit DRAM
HYB3165160T-50 PDF-Download