Path:OKDatasheet > Halbleiter Datenblatt > Integral Datenblatt > IW4502BD
IW4502BD spec: Strobed hex inverter/buffer, high-voltage silicon-gate CMOS
Ähnliche IW4502BD
- IW4502BD
- Strobed hex inverter/buffer, high-voltage silicon-gate CMOS
- IW4502BN
- Strobed hex inverter/buffer, high-voltage silicon-gate CMOS
- IW4502BN
- Strobed hex inverter/buffer, high-voltage silicon-gate CMOS
- IW4503BD
- Hex buffer, high-voltage silicon-gate CMOS
- IW4503BN
- Hex buffer, high-voltage silicon-gate CMOS
- IW4516BD
- Presettable up/down counter, high-voltage silicon-gate CMOS
- IW4516BN
- Presettable up/down counter, high-voltage silicon-gate CMOS
- IW4518BD
- Dual up-counter, high-voltage silicon-gate CMOS
IW4502BD Datenblatt und Spezifikationen
Hersteller : Integral
Verpacken : SOIC
Pins : 16
Temperatur : Min -55 °C | Max 125 °C
Größe : 206 KB
Application : Strobed hex inverter/buffer, high-voltage silicon-gate CMOS
IW4502BD PDF-Download