Path:OKDatasheet > Halbleiter Datenblatt > International Cmos Datenblatt > PEEL18CV8S-10
PEEL18CV8S-10 spec: 10ns CMOS programmable electrically erasable logic device
Ähnliche PEEL18CV8S-10
- PEEL22LV10AZJI-35
- "CMOS programmable electrically erasable logic device, 35ns"
- PEEL18CV8TI-10
- 10ns CMOS programmable electrically erasable logic device
- PEEL18CV8ZTI-25
- 25ns CMOS programmable electrically erasable logic device
- PEEL18LV8ZSI-15
- 15ns CMOS programmable electrically erasable logic device
- PEEL22CV10AJ-10
- 10ns CMOS programmable electrically erasable logic device
- PEEL18CV8P-25
- 25ns CMOS programmable electrically erasable logic device
- PEEL22CV10API-10
- 10ns CMOS programmable electrically erasable logic device
- PEEL18CV8P-25
- CMOS programmable electrically erasable logic device, 25 ns
PEEL18CV8S-10 Datenblatt und Spezifikationen
Hersteller : International Cmos
Verpacken : SOIC
Pins : 20
Temperatur : Min 0 °C | Max 70 °C
Größe : 436 KB
Application : 10ns CMOS programmable electrically erasable logic device
PEEL18CV8S-10 PDF-Download