Path:OKDatasheet > Halbleiter Datenblatt > Intersil Datenblatt > FSYC360D
FSYC360D spec: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Ähnliche FSYC360D
- FSYC055D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC055R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC160R
- Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360D Datenblatt und Spezifikationen
Hersteller : Intersil
Verpacken :
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 84 KB
Application : Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360D PDF-Download