Path:OKDatasheet > Halbleiter Datenblatt > Intersil Datenblatt > FSYE913A0D
FSYE913A0D spec: Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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FSYE913A0D Datenblatt und Spezifikationen
Hersteller : Intersil
Verpacken :
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 80 KB
Application : Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYE913A0D PDF-Download