1N5398 spec: 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V.

Ähnliche 1N5398

1N5391
- 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
1N5391G
- 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
1N5391G
- 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
1N5392
- 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V.
1N5392G
- 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V.
1N5393
- 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
1N5393G
- 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
1N5395
- 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V.

1N5398 Datenblatt und Spezifikationen

Hersteller : JGD

Verpacken : DO-15

Pins : 2

Temperatur : Min -65 °C | Max 125 °C

Größe : 161 KB

Application : 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V.