3EZ110D10 spec: 3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-10% tolerance.

Ähnliche 3EZ110D10

3EZ100D
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance.
3EZ100D1
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance.
3EZ100D10
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance.
3EZ100D2
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance.
3EZ100D3
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance.
3EZ100D4
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance.
3EZ100D5
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-5% tolerance.
3EZ10D1
- 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-1% tolerance.

3EZ110D10 Datenblatt und Spezifikationen

Hersteller : JGD

Verpacken :

Pins : 2

Temperatur : Min -65 °C | Max 175 °C

Größe : 160 KB

Application : 3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-10% tolerance.