3EZ4.3D10 spec: 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-10% tolerance.

Ähnliche 3EZ4.3D10

3EZ4.3D1
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-1% tolerance.
3EZ4.3D10
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-10% tolerance.
3EZ4.3D2
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-2% tolerance.
3EZ4.3D3
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-3% tolerance.
3EZ4.3D4
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-4% tolerance.
3EZ4.3D5
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-5% tolerance.
3EZ4.7D
- 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-20% tolerance.
3EZ4.7D1
- 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-1% tolerance.

3EZ4.3D10 Datenblatt und Spezifikationen

Hersteller : JGD

Verpacken :

Pins : 2

Temperatur : Min -65 °C | Max 175 °C

Größe : 160 KB

Application : 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-10% tolerance.