3EZ6.8D4 spec: 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-4% tolerance.

Ähnliche 3EZ6.8D4

3EZ6.2D
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-20% tolerance.
3EZ6.2D1
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-1% tolerance.
3EZ6.2D10
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-10% tolerance.
3EZ6.2D2
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-2% tolerance.
3EZ6.2D3
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-3% tolerance.
3EZ6.2D4
- "3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-4% tolerance."
3EZ6.2D5
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-5% tolerance.
3EZ6.8D
- 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-20% tolerance.

3EZ6.8D4 Datenblatt und Spezifikationen

Hersteller : JGD

Verpacken :

Pins : 2

Temperatur : Min -65 °C | Max 175 °C

Größe : 160 KB

Application : 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-4% tolerance.