3EZ8.2D10 spec: 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-10% tolerance.

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3EZ8.2D1
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-1% tolerance.
3EZ8.2D10
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-10% tolerance.
3EZ8.2D2
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-2% tolerance.
3EZ8.2D3
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-3% tolerance.
3EZ8.2D4
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-4% tolerance.
3EZ8.2D5
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-5% tolerance.
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- 3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-20% tolerance.
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3EZ8.2D10 Datenblatt und Spezifikationen

Hersteller : JGD

Verpacken :

Pins : 2

Temperatur : Min -65 °C | Max 175 °C

Größe : 160 KB

Application : 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-10% tolerance.