3EZ9.1D spec: 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-20% tolerance.

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3EZ9.1D
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-20% tolerance.
3EZ9.1D1
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-1% tolerance.
3EZ9.1D10
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.
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- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.
3EZ9.1D2
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-2% tolerance.
3EZ9.1D4
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- 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-20% tolerance.
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3EZ9.1D Datenblatt und Spezifikationen

Hersteller : JGD

Verpacken :

Pins : 2

Temperatur : Min -65 °C | Max 175 °C

Größe : 160 KB

Application : 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-20% tolerance.