| Teil no | Hersteller | Application |
|---|
| P4KE12 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. |
| P4KE36 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V. |
| SFA16 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A. |
| 1N4763C | JGD | 1W zener diode. Nominal zener voltage 91V. 2% tolerance. |
| SMBJ5914C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-2% tolerance. |
| ZMM5238D | JGD | Surface mount zener diode. Nominal zener voltage 8.7 V. Test current 20 mA. +-20% tolerance. |
| SMBJ26 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 28.9 V (min), 35.3 V (max). Test current 1.0 mA. |
| SMAJ6.5CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.5 V. Bidirectional. |
| SMAJ11CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V. Bidirectional. |
| 1N962C | JGD | 0.5W, silicon zener diode. Zener voltage 11V. Test current 11.5mA. +-2% tolerance. |
| SMBJ5937B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 33 V. Test current 11.4 mA. +-5% tolerance. |
| FR205 | JGD | 2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 600V. |
| SMAJ85C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 85 V. Bidirectional. |
| 1N752C | JGD | 500mW, silicon zener diode. Zener voltage 5.6 V. Test current 20 mA. +-2% tolerance. |
| 1N5940 | JGD | 1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-20% tolerance. |
| 1N972B | JGD | 0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. +-5% tolerance. |
| ES2J | JGD | 2.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 600 V. |
| SMAJ43C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 43 V. Bidirectional. |
| ZMM55-A5V6 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 5.2-6.0 V. Test current 5 mA. +-1% tolerance. |
| 3EZ33D | JGD | 3 W, silicon zener diode. Nominal voltage 33 V, current 23 mA, +-20% tolerance. |
| 1N972D | JGD | 0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. +-1% tolerance. |
| SMBJ5926D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 11 V. Test current 34.1 mA. +-1% tolerance. |
| 1N5525C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-2% tolerance. |
| HER306G | JGD | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
| 1N4005 | JGD | 1.0A silicon rectifier. Max recurrent peak reverse voltage 600V. |
| SMAJ5.0C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 5.0 V. Bidirectional. |
| 1N986D | JGD | 0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-1% tolerance. |
| 1N4110C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 16V. 2% tolerance. |
| 1N5952C | JGD | 1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-2% tolerance. |
| KBPC1001G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V. |
