| Teil no | Hersteller | Application |
|---|
| 1N5942A | JGD | 1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-10% tolerance. |
| 1N5921C | JGD | 1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-2% tolerance. |
| ZMM5259D | JGD | Surface mount zener diode. Nominal zener voltage 39 V. Test current 3.2 mA. +-20% tolerance. |
| 1N975B | JGD | 0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. +-5% tolerance. |
| 3EZ8.2D2 | JGD | 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-2% tolerance. |
| 1N5518 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-20% tolerance. |
| 1N5530D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| ZMM5257C | JGD | Surface mount zener diode. Nominal zener voltage 33 V. Test current 3.8 mA. +-10% tolerance. |
| MUR105 | JGD | 1.0A ultra fast rectifier. Max recurrent peak reverse voltage 50V. |
| 1N5523D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-1% tolerance. |
| 1N960B | JGD | 0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-5% tolerance. |
| 3EZ14D5 | JGD | 3 W, silicon zener diode. Nominal voltage 14 V, current 53 mA, +-5% tolerance. |
| SMAJ54CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 54 V. Bidirectional. |
| 3EZ130D5 | JGD | 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-5% tolerance. |
| SR204 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 2.0 A. |
| MUR405 | JGD | 4.0A ultra fast rectifier. Max recurrent peak reverse voltage 50V. |
| 1N4004L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 400V. |
| ZMM55-A10 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 9.4-10.6 V. Test current 5 mA. +-1% tolerance. |
| SMAJ150C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V. Bidirectional. |
| 1N985A | JGD | 0.5W, silicon zener diode. Zener voltage 100V. Test current 1.3mA. +-10% tolerance. |
| P4KE130CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 130 V. Bidirectional. |
| SMBJ45 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 50.0 V (min), 61.1 V (max). Test current 1.0 mA. |
| 1N4118D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 27V. 1% tolerance. |
| HER201G | JGD | 2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| SMAJ75C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V. Bidirectional. |
| ZMM55-C11 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 10.4-11.6 V. Test current 5 mA. +-5% tolerance. |
| SMBJ75A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 83.3 V (min), 92.1 V (max). Test current 1.0 mA. |
| 1N5954A | JGD | 1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
| 1N977B | JGD | 0.5W, silicon zener diode. Zener voltage 47V. Test current 2.7mA. +-5% tolerance. |
| SMAJ5.0C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 5.0 V. Bidirectional. |
