Path:OKDatasheet > Halbleiter Datenblatt > MDE Semiconductor Datenblatt > 30KW108
30KW108 spec: 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
Ähnliche 30KW108
- 30KW102
- 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW108
- 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW108A
- 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW120
- 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW132
- 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW132A
- 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW144
- 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW144A
- 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
30KW108 Datenblatt und Spezifikationen
Hersteller : MDE Semiconductor
Verpacken : P-600
Pins : 2
Temperatur : Min -55 °C | Max 175 °C
Größe : 182 KB
Application : 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
30KW108 PDF-Download