Path:OKDatasheet > Halbleiter Datenblatt > MDE Semiconductor Datenblatt > P4KE11A
P4KE11A spec: 9.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
Path:OKDatasheet > Halbleiter Datenblatt > MDE Semiconductor Datenblatt > P4KE11A
P4KE11A spec: 9.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
Hersteller : MDE Semiconductor
Verpacken :
Pins : 2
Temperatur : Min -55 °C | Max 175 °C
Größe : 928 KB
Application : 9.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications