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P4KE8.2 spec: 6.63V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
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P4KE8.2 Datenblatt und Spezifikationen
Hersteller : MDE Semiconductor
Verpacken :
Pins : 2
Temperatur : Min -55 °C | Max 175 °C
Größe : 928 KB
Application : 6.63V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE8.2 PDF-Download