Path:OKDatasheet > Halbleiter Datenblatt > MDE Semiconductor Datenblatt > SA8.0
SA8.0 spec: 8.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
Ähnliche SA8.0
- SA8.0
- 8.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- SA8.0A
- 8.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- SA8.5
- 8.50V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- SA8.5A
- 8.50V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SA8.0 Datenblatt und Spezifikationen
Hersteller : MDE Semiconductor
Verpacken : DO-15
Pins : 2
Temperatur : Min -55 °C | Max 175 °C
Größe : 660 KB
Application : 8.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SA8.0 PDF-Download