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Um den spezifischen MagnatecDatenblatt, Suche okDatasheet Zahl von Teilzeitbeschäftigten oder Komponente Beschreibung. Es wird Ihnen eine Liste aller passenden Teile mit Magnatec Datenblätter. Klicken Sie auf einen beliebigen aufgelisteten elektronisches Bauteil, um mehr Informationen einschließlich aller Angaben.
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| Teil no | Application |
|---|---|
| BUZ905DP | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
| BCU83 | NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications reguiring low loss devices. |
| BUZ901DP | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. |
| BUZ903 | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
| SMX35 | Silicon NPN epitaxial planar power transistor. |
| BCU83D | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| BUZ900P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. |
| BUZ900P | N-channel power MOSFET for audio applications, 160V |
| BUZ905P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
| BUL74B | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BCU81 | NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications requiring low loss devices. |
| BUZ906P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ900D | N-channel power MOSFET for audio applications, 160V |
| BUZ906X4S | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ906DP | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ901P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. |
| BCU86 | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| BUZ901D | N-channel power MOSFET for audio applications, 200V |
| BUZ907D | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
| BUZ902P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
| BUZ908D | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
| BUL54A | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BUZ908P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
| BUZ903D | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
| BUZ907P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
| T64 | PNP silicon darlington power transistor. Complementary epitaxial base transistors in monolithic darlington circuit for audio output stages and general amplifier and switching applications. |
| BCU86D | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| SMX37 | Silicon NPN epitaxial planar power transistor. |
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