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BUL52B spec: Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
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BUL52B Datenblatt und Spezifikationen
Hersteller : Magnatec
Verpacken : TO220
Pins : 3
Temperatur : Min 0 °C | Max 150 °C
Größe : 20 KB
Application : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B PDF-Download