Path:OKDatasheet > Halbleiter Datenblatt > Micron Datenblatt > MT4C4M4E8TGS-5
MT4C4M4E8TGS-5 spec: 4Meg x 4 banks, EDO DRAM, 5.0V, self refresh, 50ns
Ähnliche MT4C4M4E8TGS-5
- MT4C4001JDJ-6IT
- "1M x 4 DRAM fast page mode, 60ns"
- MT4C4001JTG-6L
- 1M x 4 DRAM extended refresh, 60ns, low power
- MT4C4001JDJ-8L
- 1M x 4 DRAM extended refresh, 80ns, low power
- MT4C4001JTG-7L
- 1M x 4 DRAM extended refresh, 70ns, low power
- MT4C4001JTG-8IT
- 1M x 4 DRAM fast page mode, 80ns
- MT4C4M4E8TGS-5
- 4Meg x 4 banks, EDO DRAM, 5.0V, self refresh, 50ns
- MT4C4M4E8TG-5
- 4Meg x 4 banks, EDO DRAM, 5.0V, standard refresh, 50ns
- MT4C4001JTG-6
- 1M x 4 DRAM fast page mode, 60ns
MT4C4M4E8TGS-5 Datenblatt und Spezifikationen
Hersteller : Micron
Verpacken : TSOP
Pins : 24
Temperatur : Min 0 °C | Max 70 °C
Größe : 320 KB
Application : 4Meg x 4 banks, EDO DRAM, 5.0V, self refresh, 50ns
MT4C4M4E8TGS-5 PDF-Download