M2S56D40ATP-10 spec: 265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7

Ähnliche M2S56D40ATP-10

M2S56D20AKT
- 256M double data rate synchronous DRAM
M2S56D20AKT-10
- 265M double data rate SDRAM, 64M x 4 organization, 10ns, Vcc=2.3-2.7
M2S56D20AKT-10L
- 265M double data rate SDRAM, 64M x 4 organization, 10ns, Vcc=2.3-2.7, low power
M2S56D20AKT-75
- 265M double data rate SDRAM, 64M x 4 organization, 7.5ns, Vcc=2.3-2.7
M2S56D20AKT-75A
- 265M double data rate SDRAM, 64M x 4 organization, 7.5ns, Vcc=2.3-2.7
M2S56D20AKT-75L
- 265M double data rate SDRAM, 64M x 4 organization, 7.5ns, Vcc=2.3-2.7, low power
M2S56D20ATP
- 256M double data rate synchronous DRAM
M2S56D20ATP-10L
- 265M double data rate SDRAM, 64M x 4 organization, 10ns, Vcc=2.3-2.7, low power

M2S56D40ATP-10 Datenblatt und Spezifikationen

Hersteller : Mitsubishi

Verpacken : TSOP II

Pins : 66

Temperatur : Min 0 °C | Max 70 °C

Größe : 844 KB

Application : 265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7