Path:OKDatasheet > Halbleiter Datenblatt > Mitsubishi Datenblatt > M54587P
M54587P spec: 8-unit 500mA darlington transistor array with clamp diode
Ähnliche M54587P
- M54519FP
- 7-unit 400mA darlington transistor array
- M54519P
- 7-unit 400mA darlington transistor array
- M54519P
- 7-unit 400mA darlington transistor array
- M54522FP
- 8-unit 400mA darlington transistor array with clamp diode
- M54522FP
- 8-unit 400mA darlington transistor array with clamp diode
- M54522P
- 8-unit 400mA darlington transistor array with clamp diode
- M54523FP
- 7-unit 500mA darlington transistor arrays with clamping diodes.
- M54523P
- 7-unit 500mA darlington transistor arrays with clamping diodes.
M54587P Datenblatt und Spezifikationen
Hersteller : Mitsubishi
Verpacken : 20P4
Pins : 20
Temperatur : Min -20 °C | Max 75 °C
Größe : 48 KB
Application : 8-unit 500mA darlington transistor array with clamp diode
M54587P PDF-Download