Path:OKDatasheet > Halbleiter Datenblatt > Mitsubishi Datenblatt > MGFC36V7785A
MGFC36V7785A spec: 7.7-8.5GHz band 4W internally matched GaAs fet
Ähnliche MGFC36V7785A
- MGFC1403
- GaA fet for microwave low-noise amplifiers
- MGFC1403
- GaA fet for microwave low-noise amplifiers
- MGFC36V3436
- 3.4-3.6GHz band 4W internally matched GaAs FET
- MGFC36V5258
- 5.2-5.8GHz band 4W internally matched GaAs FET
- MGFC36V59964A
- 5.9-6.4GHz band 4W internally matched GaAs FET
- MGFC36V6472A
- 6.4-7.2 GHz band 4W internally matched GaAs FET
- MGFC36V7177A
- 7.1-7.7 GHz band 4W internally matched GaAs FET
- MGFC36V7785A
- 7.7-8.5GHz band 4W internally matched GaAs fet
MGFC36V7785A Datenblatt und Spezifikationen
Hersteller : Mitsubishi
Verpacken : GF-8
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 119 KB
Application : 7.7-8.5GHz band 4W internally matched GaAs fet
MGFC36V7785A PDF-Download