Path:OKDatasheet > Halbleiter Datenblatt > Mitsubishi Datenblatt > MH4S64DBKG-8
MH4S64DBKG-8 spec: 2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAM
Ähnliche MH4S64DBKG-8
- MH4S644AWXJ-5
- Fast page mode 268435456-bit (4194304- word by 64-bit) dynamic RAM
- MH4S644AWXJ-6
- Fast page mode 268435456-bit (4194304- word by 64-bit) dynamic RAM
- MH4S64AWXJ-5
- Fast page mode 268435456-bit (4194304- word by 64-bit) dynamic RAM
- MH4S64AWXJ-6
- Fast page mode 268435456-bit (4194304- word by 64-bit) dynamic RAM
- MH4S64BBKG-10
- 268435456-bit (4194304-word by 64-bit) synchronous DRAM
- MH4S64BBKG-7
- 268435456-bit (4194304-word by 64-bit) synchronous DRAM
- MH4S64BBKG-7L
- 268435456-bit (4194304-word by 64-bit) synchronous DRAM
- MH4S64BBKG-8
- 268435456-bit (4194304-word by 64-bit) synchronous DRAM
MH4S64DBKG-8 Datenblatt und Spezifikationen
Hersteller : Mitsubishi
Verpacken :
Pins : 144
Temperatur : Min 0 °C | Max 70 °C
Größe : 748 KB
Application : 2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAM
MH4S64DBKG-8 PDF-Download