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    • High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
  • BUD44D2
    • High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network

BUD44D2 Datenblatt und Spezifikationen

Hersteller : Motorola 

Verpacken : CASE 369-07 

Pins : 4 

Temperatur : Min -65 °C | Max 150 °C

Größe : 591 KB

Application : High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network 

BUD44D2 PDF-Download