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BUL45D2 spec: High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
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- High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 Datenblatt und Spezifikationen
Hersteller : Motorola
Verpacken :
Pins : 4
Temperatur : Min -65 °C | Max 150 °C
Größe : 488 KB
Application : High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 PDF-Download